The light detection performance of the Al/DCJTB/n-Si Schottky type photodetector for a wide-range spectrum

dc.contributor.authorManfo, Theodore Azemtsop
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorHussaini, Ali Akbar
dc.contributor.authorYıldırım, Murat
dc.contributor.authorGündüz, Bayram
dc.contributor.facultyfi=Tekniikan ja innovaatiojohtamisen yksikkö|en=School of Technology and Innovations|
dc.contributor.orcidhttps://orcid.org/0000-0002-9043-3111
dc.date.accessioned2025-11-12T11:15:32Z
dc.date.issued2025-10-30
dc.description.abstractThe 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) is a red fluorescent dye known for its high luminescence efficiency, color purity, and resistance to concentration quenching. DCJTB was applied as an interfacial layer between Si and Al via spin coating to investigate its effect on Schottky photodetector performance at various light intensities and wavelengths (UV–Vis–NIR). Structural and optical properties of the DCJTB layer were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and ultraviolet–visible (UV–vis) spectroscopy. Current–voltage (I–V) and current–time (I–t) measurements revealed that the Al/DCJTB/n-Si heterojunction exhibits an ideality factor (n) of 3.15 and a barrier height () of 0.701 eV under dark conditions. With increasing illumination (20–100 mW/cm2), n varied from 3.884 to 3.077, while the barrier height increased slightly. The device achieved a responsivity (R) of 0.63 A/W and a specific detectivity of 1.63 × 1010 Jones under sunlight. The external quantum efficiency (EQE) reached 0.68 % at 550 nm, confirming high sensitivity in the green region, while performance declined beyond 700 nm. These findings demonstrate that the Al/DCJTB/n-Si heterojunction is most effective in the visible spectrum, making it promising for optoelectronic and photodetection applications.
dc.description.notification© 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies. This manuscript version is made available under the Creative Commons Attribution–NonCommercial–NoDerivatives 4.0 International (CC BY–NC–ND 4.0) license, https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.description.reviewstatusfi=vertaisarvioitu|en=peerReviewed|
dc.embargo.lift2027-10-30
dc.embargo.terms2027-10-30
dc.format.contentfi=kokoteksti|en=fulltext|
dc.format.extent40
dc.identifier.urihttps://osuva.uwasa.fi/handle/11111/19187
dc.identifier.urnURN:NBN:fi-fe20251112107281
dc.language.isoeng
dc.publisherElsevier
dc.relation.doi10.1016/j.optmat.2025.117688
dc.relation.ispartofjournalOptical materials
dc.relation.issn1873-1252
dc.relation.issn0925-3467
dc.relation.urlhttps://doi.org/10.1016/j.optmat.2025.117688
dc.relation.volume169
dc.rightsCC BY-NC-ND 4.0
dc.subjectDCJTB; Schottky; photodetector; responsivity; external quantum efficiency
dc.subject.disciplinefi=Sähkötekniikka|en=Electrical Engineering|
dc.titleThe light detection performance of the Al/DCJTB/n-Si Schottky type photodetector for a wide-range spectrum
dc.type.okmfi=A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä|en=A1 Peer-reviewed original journal article|sv=A1 Originalartikel i en vetenskaplig tidskrift|
dc.type.publicationarticle
dc.type.versionacceptedVersion

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